Infineon IKP15N60TXKSA1

Trans IGBT Chip N-CH 600V 26A 130mW Automotive 3-Pin(3+Tab) TO-220AB Tube
$ 0.859
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon IKP15N60TXKSA1.

IHS

Datasheet13 pagine10 anni fa
Datasheet13 pagine10 anni fa

element14 APAC

Farnell

Cronologia dell'inventario

Trend di 3 mesi:
-89.47%

Modelli CAD

Scarica il simbolo Infineon IKP15N60TXKSA1, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
EE Concierge
SimboloImpronta
SnapEDA
Impronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-11-10
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2026-03-15
LTD Date2026-09-15

Parti correlate

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
NGTB15N60EG 600 V 30 A 78/130 ns Short Circuit Rated IGBT Flange Mount-TO-220
Trans IGBT Chip N-CH 650V 30A 117000mW 3-Pin(3+Tab) TO-220AB Tube
STMicroelectronicsSTGP15H60DF
IGBT 600V 30A 115W TO220 / Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220AB Tube
STMicroelectronicsSTGF10NB60SD
STGF10NB60SD Series 600 V 23 A Through Hole Silicon IGBT - TO-220FP
STMicroelectronicsSTGF15H60DF
STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP

Descrizioni

Descrizioni di Infineon IKP15N60TXKSA1 fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 26A 130mW Automotive 3-Pin(3+Tab) TO-220AB Tube
Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
IGBT, General Purpose, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 Pins
Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:15A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:130W; Power Dissipation Pd:130W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IKP15N60T
  • SP000683064