Infineon IHW40N135R3FKSA1

Trans IGBT Chip N-CH 1350V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 80A I(C), 1350V V(BR)CES, N-Channel, TO-247

Reverse conducting IGBT with monolithic body diode

TRANSISTOR, IGBT, 1.35KV, 80A, TO-247

REVERSE CONDUCTING IGBT W/MONOLT

Transistor, Igbt, 1.35Kv, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:429W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes

The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications