Infineon FF1500R17IP5BPSA1

Infineon FF1500R17IP5BPSA1 Dual IGBT Module, 1.5 kA 1700 V, 10-Pin PRIME3+

Insulated Gate Bipolar Transistor, 1500A I(C), 1700V V(BR)CES, N-Channel

Transistor IGBT Module N-CH 1700V 1500A 20V Screw Mount Tray

IGBT Module Trench Field Stop 2 Independent 1700V 1500A 20mW

Trench/Field stop IGBT5, Emitter Controlled 5 diode and NTC

1700 V, 1500 A dual IGBT module, AG-PRIME3+-5, RoHS

IGBT MODULE, DUAL N-CH, 1.7KV, 1.5KA;

模块, IGBT 模块, 双 N沟道, 1.7KV, 1.5KA;

IGBT MODULE 1700V 1500A MODULE

Igbt Mod, 1.7Kv, 1.5Ka; Continuous Collector Current:1.5Ka; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Infineon Technologies FF1500R17IP5BPSA1

1700V PrimePACK2 dual IGBT module with IGBT5 and .XT interconnection technology, Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC. | Summary of Features: Extended operating temperature (T vjop = 175C); Output current increased by more than 25% in the same footprint; Copper Bonds for high current carrying capabilities; Sintering of chips for highest power cycling capabilities; Total losses reduced by up to 20%; Package with CTI > 400 | Benefits: Increase in Power Density by up to 25%; Up to 10 times longer lifetime; Less cooling effort for same output power; Enables higher system overload conditions | Target Applications: drives; wind; traction; cav