Infineon BSP135IXTSA1

Infineon N-Ch Depletion MOSFET BSP135I Vds=600V 120mA SOT-223 SMD 4-Pin

Power MOSFET, N Channel, 600 V, 120 mA, 25 ohm, SOT-223, Surface Mount

Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R

Single N-Channel 600 V 45 Ohm 3.7 nC SIPMOS® Small Signal Mosfet - TO-261-4

MOSFETs; BSP135IXTSA1; INFINEON TECHNOLOGIES; 600 V; 120 mA; 20 V; 1.8 W

MOSFET N-CH 600V 120MA SOT223-4

Power Field-Effect Transistor, 0.12A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL SIGNAL MOSFETS PG-SOT223-4

The N-channel depletion mode MOSFET BSP135I in SOT-223 package features VDS 600 V and RDS(on) of 60 Ohm.With an optimal price/performance ratio and small footprint packages Infineon’s small signal and small power MOSFETs are the best fit for a wide range of applications and circuits. These include low voltage drives, linear battery charger, battery protection, load switches, DC-DC converters, reverse polarity protection and many more.Small signal/small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. Enhancement and depletion-mode options, as well as industry qualification make Infineon's portfolio the best fit for industry and consumer markets.