Infineon BSL215CH6327XTSA1

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.108 ohm
$ 0.245
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DistributorSKUMinPkg
Avnet
2
97Y125544401
5d
Newark
2
BSL215CH6327XTSA139491Cut Tape
Future Electronics
3
BSL215CH6327XTSA160003KTape & Reel
Arrow ElectronicsBSL215CH6327XTSA116.4091
RutronikTMOS218360003K
12h

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Datasheet13 pagine12 anni fa

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Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2013-12-03
Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descrizioni

Descrizioni di Infineon BSL215CH6327XTSA1 fornite dai suoi distributori.

Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.108 ohm
EBV Elektronik
Trans MOSFET P/N-CH -20V/20V -1.5A/1.5A 6-Pin TSOP T/R
Avnet Japan
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Semicontronic
MOSFET, AEC-Q101, COMPLEMENT N&P, TSOP-6; Transistor Polarity:N and P Complement; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold V
element14 APAC
500W 12V 1.2V@ N Channel|600mV@ P Channel 0.73nC@ 4.5V @ NChannel,3nC@ 5V @ PChannel 1N,1P 20V 140m¦¸@ 4.5V @ N Channel,150m¦¸@ 4.5V @ P Channel 110pF@ 10V @ N Channel,270pF@ 10V @ P Channel SOP , 2.9mm*160cm*1.1mm
UnikeyIC
Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon’s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Infineon
Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:1.5A; Continuous Drain Current Id P Channel:1.5A; No. Of Pins:6Pins Rohs Compliant: Yes |Infineon Technologies BSL215CH6327XTSA1.
Newark
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 1.5 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TSOP / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
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Immagini

Augswan
RS
element14 APAC
TME
Future Electronics
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Micros
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Alias del produttore

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
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  • INFIEON
  • INFINEON TECH
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  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BSL215C
  • BSL215C H6327
  • BSL215C,H6327
  • BSL215CH6327
  • BSL215CH6327XTSA1.
  • SP001101000