Infineon BSC028N06NSTATMA1

60 V 24 A 100 A 3 W 2.8mOhm Surface Mount N-Channel MOSFET - PG-TDSON-8

Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R

OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness, PG-TDSON-8, RoHS

Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP

MOSFET N-CH 60V 24A/100A TDSON / N-Channel 60 V 24A (Ta), 100A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8-7

Power Field-Effect Transistor, 137A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

3W 20V 37nC@ 10V 60V 2.8m¦¸@ 10V 2.7nF@ 30V TDSON-8-EP

Infineon MOSFET BSC028N06NSTATMA1

N-CH 60V 100A 2,3mOhm SuperSO8

BSC028N06 - N-CHANNEL POWER MOSF

Mosfet, N-Ch, 60V, 100A, Tdson; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon Technologies BSC028N06NSTATMA1

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.