Infineon BGA711N7E6327XTSA1

Tape & Reel (TR) 1 Surface Mount TELECOM CIRCUIT RF Amplifier 2mm -8dBm 2.8V 17dB

RF Amplifier 3G/3.5G/4GSingleBand SiGe Bipolar LNA

RF Amp Single LNA 2.7GHz 3V 6-Pin TSNP EP T/R

The BGA711N7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X, TSNP-7-1, RoHS

IC RF AMP 1.8GHZ-2.7GHZ TSNP7-1

BGA711N7 GPS OR GLONASS OR COMPASS LNA;

Telecom Circuit, 1-Func, Bipolar, PDSO6

The BGA711N7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineons proprietary and cost-effective SiGe:C technology and comes in low profile TSNP-7-1 or TSNP-7-2 leadless green packages. Because the matching is off chip, the 2100 MHz path can be easily converted into a 1900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip. | Summary of Features: Gain: 17 / -8 dB in high / low gain mode; Noise figure: 1.1 dB in high gain mode; Supply current: 3.6 / 0.5 mA in high / low gain mode; Standby mode (< 2 A typ.); Output internally matched to 50 ; Inputs pre-matched to 50 ; 2 kV HBM ESD protection; Low external component count; Small leadless TSNP-7-1 / TSNP-7-2 packages (2.0 x 1.3 x 0.39 mm); Pb-free (RoHS compliant) package | Target Applications: LNA for LTE and 3G systems