Infineon BFR380FH6327XTSA1

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN
$ 0.13
NRND
Pagina del produttoreScheda dati

Prezzo e stock

Vedi tutte le interruzioni di prezzo
DistributorSKUMinPkg
Avnet
2
50Y17687971
16h
Newark
2
BFR380FH6327XTSA17971Cut Tape
Future Electronics
2
BFR380FH6327XTSA175.0003KTape & Reel
Arrow Electronics
2
BFR380FH6327XTSA135.6851
Rochester ElectronicsBFR380FH6327XTSA1456.770
14h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Infineon BFR380FH6327XTSA1.

IHS

Datasheet17 pagine7 anni fa

TME

element14

_legacy Avnet

Farnell

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Supply Chain

Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-23
Lifecycle StatusNRND (Last Updated: 1 week ago)

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Descrizioni

Descrizioni di Infineon BFR380FH6327XTSA1 fornite dai suoi distributori.

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN
IHS
9V 380mW 90@40mA,3V 80mA NPN TSFP-3 Bipolar Transistors - BJT ROHS
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Bipolar 380mW 2V 30nA 15V 6V 80mA TSFP-3 1.2mm*800¦Ìm*550¦Ìm
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RF TRANSISTOR, NPN, 6V, 14GHZ, TSFP
Newark
RF Bipolar Transistors RF BIP TRANSISTOR
Digi-ic_SMART PIONEER
Infineon RF Bip Transisitor BFR 380F H63
RS APAC
Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 6 / DC Current Gain (hFE) = 120 / Collector-Base Voltage (Vcbo) V = 15 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 14 / Power Dissipation (Pd) mW = 380 / Package Type = SOT-723 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
Distrelec
Transistor, RF TSFP3; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:6V; Transition Frequency Typ ft:9GHz; Power Dissipation Pd:380mW; DC Collector Current:80mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; RF Transistor Case:TSFP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Associated Gain Ga:13.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:40mA; Gain Bandwidth ft Min:6GHz; Gain Bandwidth ft Typ:9GHz; Hfe Min:60; No. of Transistors:1; Noise Figure Typ:1.1dB; Output @ Third Order Intercept Point IP3:29dB; Package / Case:TSFP3; Power @ 1dB Gain Compression, P1dB:16dBm; Power Dissipation Ptot Max:380mW; SMD Marking:FCs; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:15V
element14 APAC

Immagini

Infineon
Augswan
Newark
Farnell
TME
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Alias del produttore

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  • Infineon Technologies
  • INF
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  • INFIEON
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  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • BFR 380 FH6327
  • BFR 380F H6327
  • BFR380F
  • BFR380F H6327
  • BFR380FH6327
  • SP000750444