Infineon AIKW50N65RF5XKSA1

Trans IGBT Chip N-CH 650V 80A 250W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

IGBT, 80 A, 1.6 V, 250 W, 650 V, TO-247, 3 Pins

130W 3V@ 250uA 66nC@ 5V 55V 8m¦¸@ 10V,42A 42A 2.9nF@ 25V

IGBT 650V 50A+CoolSiC D.TO247-3

TRANSISTOR, IGBT, 650V, 80A, TO-247;

IGBT TRENCH FS 650V 80A TO247-3

Igbt, Single, 650V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:250W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies AIKW50N65RF5XKSA1

Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC.The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities.