onsemi MPS5179
$ 0.077
Obsolete
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Cronologia dell'inventario
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2006-12-31
LTD Date2007-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
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Tape & Box (TB) Through Hole NPN SINGLE RF Transistor 120 @ 5mA 10V 50mA 250mW 1.1GHz
onsemiKSC388CYTA
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiFJN3302RTA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Descrizioni
Descrizioni di onsemi MPS5179 fornite dai suoi distributori.
NPN Transistor 200W 2.5V 20V 12V 50mA TO-92-3 TH 5.2mm × 4.19mm × 5.33mm
Trans GP BJT NPN 12V 0.05A 3-Pin TO-92 Bulk
VHF BAND Si NPN RF SMALL SIGNAL TRANSISTOR TO-226AA
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.2W; C-E Breakdown Voltage:12V; DC Current Gain Min (hfe):25; Collector Current:0.05A; Package/Case:TO-92; DC Current Gain Max (hfe):250 RoHS Compliant: No
NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)12 V
Continuous Collector Current50 mA
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2.5 V
Frequency2 GHz
Gain15 dB
Gain Bandwidth Product2 GHz
hFE Min25
Max Breakdown Voltage12 V
Max Collector Current50 mA
Max Frequency2 GHz
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation200 mW
Transition Frequency900 MHz
Voltage Rating (DC)12 V
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità