onsemi ISL9K1560G3

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247
$ 1.34
Obsolete
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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.80
Introduction Date2001-04-03
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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Descrizioni

Descrizioni di onsemi ISL9K1560G3 fornite dai suoi distributori.

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-247
Rectifier Diode Switching 600V 30A 40ns 3-Pin(3+Tab) TO-247 Tube
ISL Series 600 V 100 uA Through Hole Dual Ultra Fast Rectifier - TO-247-3
Fast Rectifier, Cmn Cthd 15A To-247; Repetitive Peak Reverse Voltage:600V; Average Forward Current:15A; Forward Voltage Max:2.2V; Diode Module Configuration:-; Diode Case Style:To-247; No. Of Pins:3Pins; Forward Surge Current:200A Rohs Compliant: Yes |Onsemi ISL9K1560G3
DIODE, FAST, 15A, 600V, TO-247; Diode Type:Fast Recovery; Voltage, Vrrm:600V; Current, If AV:15A; Current, Ifsm:200A; Time, trr Typ:30ns; Voltage, Vf Max:2.2V; Temperature, Tj Max:175°C; Case Style:TO-247; Pins, No. of:3; Current, Ifrm:30A; Current, Ifs Max:200A; Termination Type:Through Hole; Time, trr Max:40ns; Voltage, Forward at If:2.2V
The ISL9K1560G3 is a STEALTH™ dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

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  • onsemiconductor
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  • ISL9K1560G3..