onsemi FGA180N30DTU

IGBT 300V 180A 480W Through Hole TO-3PN
$ 3.802
Obsolete
Scheda dati

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DistributorSKUMinPkg
Verical
2
FGA180N30DTU21676
Rochester ElectronicsFGA180N30DTU15.404
10h
Win SourceWS-FGA180N30DTU222111
11h
Worldway ElectronicsFGA180N30DTU15.9877
10h
QUARKTWIN TECHNOLOGY LTD
2
FGA180N30DTUContatto
>1wk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FGA180N30DTU.

IHS

Datasheet9 pagine19 anni fa

Farnell

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-06-03
LTD Date2010-12-03

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Descrizioni

Descrizioni di onsemi FGA180N30DTU fornite dai suoi distributori.

IGBT 300V 180A 480W Through Hole TO-3PN
Avnet
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 1.4V @ 15V 40A 180A 480W 21ns
Fly-Wing Technology
Insulated Gate Bipolar Transistor, 180A I(C), 300V V(BR)CES, N-Channel
IHS
IGBT, TO-3P; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:300V; Current, Ic Continuous a Max:180A; Voltage, Vce Sat Max:1.4V; Power Dissipation:480W; Case Style:TO-3P; Termination Type:Through Hole; Current, Ic @ Vce Sat:40A; Current, Icm Pulsed:450A; Pin Configuration:With flywheel diode; Pins, No. of:3; Power, Pd:480W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.26°C/W; Time, Fall:140ns; Time, Rise:210ns; Transistors, No. of:1; Voltage, Vceo:300V
Farnell

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  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd