Diodes Inc. ZXTN25012EFLTA

Single Bipolar Transistor, NPN, 12 V, 2 A, 350 mW, SOT-23, 3 Pins, Surface Mount
$ 0.208
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZXTN25012EFLTA.

IHS

Datasheet8 pagine19 anni fa

Diodes Inc SCT

Future Electronics

Cronologia dell'inventario

Trend di 3 mesi:
-41.54%

Modelli CAD

Scarica il simbolo Diodes Inc. ZXTN25012EFLTA, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3DScarica
SnapEDA
SimboloImpronta
3DScarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-05
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

onsemiMMBT2369
MMBT2369 Series 15 V 200 mA NPN Surface Mount Switching Transistor - SOT-23-3
Tape & Reel (TR) Surface Mount NPN SINGLE RF Transistor 25 @ 3mA 1V 50mA 350mW 15dB
onsemiBSV52
BSV52 Series 12 V 200 mA NPN Surface Mount Switching Transistor - SOT-23-3
Diodes Inc.ZXTN25015DFHTA
Single Bipolar Transistor, NPN, 30 V, 5 A, 1.81 W, SOT-23, 3 Pins, Surface Mount
Diodes Inc.BFS17NTA
BFS17N Series 11 V 50 mA NPN Surface Mount Transistor - SOT-23-3
RF Transistor NPN 15V 50mA 1.1GHz 150mW Surface Mount SOT-23-3 (TO-236)

Descrizioni

Descrizioni di Diodes Inc. ZXTN25012EFLTA fornite dai suoi distributori.

Single Bipolar Transistor, NPN, 12 V, 2 A, 350 mW, SOT-23, 3 Pins, Surface Mount
ZXTN25012EFL Series 12 V 2 A NPN SMT Low Power Transistor - SOT-23
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
General Purpose Transistors NPN Ic=2A Vceo=12V hfe=500~1500 P=350mW SOT23
Trans GP BJT NPN 12V 2A 350mW 3-Pin SOT-23 T/R
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Power Dissipation Pd:350mW; DC Collector Current:5A; DC Current Gain hFE:800; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:130mV; Continuous Collector Current Ic Max:2A; Current Ib:500mA; Current Ic Continuous a Max:5A; Current Ic hFE:2A; Gain Bandwidth ft Typ:260MHz; Hfe Min:370; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:72ns; Turn On Time:70ns; Voltage Vcbo:20V

Alias del produttore

Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated