Diodes Inc. ZXMN6A09KTC
$ 0.76
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | ZXMN6A09KTC | 0 | 2500 | 3h | ||||||||
| RS (Formerly Allied Electronics) | ZXMN6A09KTC | 0 | 10 | Bulk | 22h | |||||||
| Avnet | ZXMN6A09KTC | 0 | 2500 | 7h | ||||||||
| Future Electronics | ZXMN6A09KTC | 0 | 2500 | Tape & Reel | ||||||||
| Arrow Electronics | ZXMN6A09KTC | 0 | 2500 |
Modelli CAD
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-16
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
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Descrizioni
Descrizioni di Diodes Inc. ZXMN6A09KTC fornite dai suoi distributori.
N-Channel 60 V 0.04 Ohm Power MOSFET Surface Mount - TO-252-3
Transistor: N-MOSFET; unipolar; 60V; 9.6A; 0.04ohm; 10.1W; -55+150 deg.C; SMD; TO252(DPAK); AEC-Q100
Trans MOSFET N-CH 60V 11.8A 3-Pin(2+Tab) DPAK T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 7.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
2.15W(Ta) 20V 3V@ 250¦ÌA 29nC@ 10 V 1N 60V 40m¦¸@ 7.3A,10V 11.2A 1.426nF@30V TO-252-3 6.73mm*6.22mm*2.39mm
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Specifiche tecniche
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)7.3 A
Current Rating11.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time14.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.426 nF
Max Operating Temperature150 °C
Max Power Dissipation10.1 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time4.6 ns
Turn-Off Delay Time32.5 ns
Turn-On Delay Time4.8 ns
Voltage Rating (DC)60 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità