Diodes Inc. ZXMN4A06GTA

Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SOT223
$ 0.538
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZXMN4A06GTA.

Newark

Datasheet8 pagine4 anni fa
Datasheet7 pagine11 anni fa

Diodes Inc SCT

IHS

element14 APAC

RS (Formerly Allied Electronics)

Cronologia dell'inventario

Trend di 3 mesi:
-33.95%

Modelli CAD

Scarica il simbolo Diodes Inc. ZXMN4A06GTA, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Component Search Engine
SimboloImpronta
3DScarica
EE Concierge
SimboloImpronta
Ultra Librarian
SimboloImpronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Lifecycle StatusProduction (Last Updated: 2 months ago)

Parti correlate

onsemiNDT451AN
N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ
Diodes Inc.ZXMP4A16GTA
ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
STMicroelectronicsSTN4NF03L
N-Channel 30V - 0.039 Ohm - 4A - SOT-223 STripFET(TM) POWER MOSFET
onsemiNDT452AP
P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ
onsemiFDT459N
N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V

Descrizioni

Descrizioni di Diodes Inc. ZXMN4A06GTA fornite dai suoi distributori.

Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SOT223
Power MOSFET, Low Voltage, N Channel, 40 V, 7 A, 0.05 ohm, SOT-223, Surface Mount
Single N-Channel 40 V 3.9 W 18.2 nC Silicon Surface Mount Mosfet - SOT-223
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd
N Channel Mosfet, 40V, 7A, Sot-223; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:7A; Tensión Drenaje-Fuente Vds:40V; Resistencia De Activación Rds(On):50Mohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:4 |Diodes Inc. ZXMN4A06GTA
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: 7A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 22A; SMD Marking: ZXMN 4A06; Termination Type: Surface Mount Device; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V

Alias del produttore

Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated