Diodes Inc. ZXMN10A08DN8TA
$ 0.491
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | ZXMN10A08DN8TA | 79.000 | 500 | 8h | ||||||||
| Newark | ZXMN10A08DN8TA | 376 | 1 | Cut Tape | ||||||||
| Verical | ZXMN10A08DN8TA | 79.000 | 500 | |||||||||
| Arrow Electronics | ZXMN10A08DN8TA | 500 | 500 | |||||||||
| Future Electronics | ZXMN10A08DN8TA | 1500 | 500 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -10.97%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
Diodes Inc.ZXMC10A816N8TC
Mosfet, N & P-Ch, 2.1A, 100V, 150Deg C Rohs Compliant: Yes |Diodes Inc. ZXMC10A816N8TC
Descrizioni
Descrizioni di Diodes Inc. ZXMN10A08DN8TA fornite dai suoi distributori.
Transistor MOSFET Array Dual N-CH 100V 2.1A 8-Pin SOIC T/R
Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R / MOSFET 2N-CH 100V 1.6A 8-SOIC
ZXMN10A08 Series 100 V 0.25 Ohm N-Channel Enhancement Mode MOSFET -SOIC-8
1.8W 20V 2V@ 250¦ÌA (Min) 7.7nC@ 10V 2N 100V 250m¦¸@ 3.2A,10V 1.6A 405pF@50V SOIC-8 1.75mm
Mosfet, N-Ch, 100V, 2.1A, Soic Rohs Compliant: Yes |Diodes Inc. ZXMN10A08DN8TA
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.8 W
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -10.97%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)1.6 A
Current Rating2.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time2.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance405 pF
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements1
PackagingCut Tape
Power Dissipation1.8 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time2.2 ns
Schedule B8541290080
Turn-Off Delay Time8 ns
Turn-On Delay Time3.4 ns
Voltage Rating (DC)100 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità