Diodes Inc. ZXMC3F31DN8TA
$ 0.351
Production
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMC3F31DN8TA | 450 | 1 | Cut Tape | ||||||||
| TME | ZXMC3F31DN8TA | 444 | 1 | 22h | ||||||||
| DigiKey | ZXMC3F31DN8TADICT-ND | 3350 | 1 | Cut Tape | ||||||||
| Avnet | ZXMC3F31DN8TA | 0 | 500 | 2d | ||||||||
| Arrow Electronics | ZXMC3F31DN8TA | 0 | 500 |
Cronologia dell'inventario
Tendenza a 3 mesi: -47.40%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-05
Lifecycle StatusProduction (Last Updated: 4 months ago)
Parti correlate
Diodes Inc.DMC3025LSD-13
Dual N/P-Channel 30 V 32/85 mOhm 4.6/5.1 nC 1.2 W Silicon SMT Mosfet SOIC-8
Diodes Inc.DMC3028LSDX-13
Dual N/P-Channel 30 V 35/41 mOhm 6/10.9 nC 1.2 W Silicon SMT Mosfet - SOIC-8
InfineonIRF7421D1TRPBF
30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7421D1TRPBF
InfineonIRF7603TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55
InfineonIRF7406TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
Descrizioni
Descrizioni di Diodes Inc. ZXMC3F31DN8TA fornite dai suoi distributori.
Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8
2.1W 20V 3V@ 250¦ÌA 12.9nC@ 10V 2N+2P 30V 24m¦¸@ 7A,10V 6.8A,4.9A 608pF@15V SOIC-8
Mosfet, Dual, N/P-Ch, 30V, 7.3A Rohs Compliant: Yes |Diodes Inc. ZXMC3F31DN8TA
30V SO8 Complementary dual enhancement mode MOSFET, N+P, 30V VDS, 20±V VGS
Diodes Inc SCT
Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -47.40%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance608 pF
Max Operating Temperature150 °C
Max Power Dissipation2.35 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.1 W
Rds On Max24 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time1.9 ns
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità