Diodes Inc. ZX5T949GTA

ZX5T949 Series PNP 30 V 5.5 A 3 W Low Power Transistor - SOT223
$ 0.515
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per Diodes Inc. ZX5T949GTA.

Newark

Datasheet7 pagine10 anni fa
Datasheet6 pagine22 anni fa

IHS

DigiKey

RS (Formerly Allied Electronics)

Diodes Inc SCT

Cronologia dell'inventario

Trend di 3 mesi:
-0.20%

Modelli CAD

Scarica il simbolo Diodes Inc. ZX5T949GTA, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.

FONTEeCADmCADFILE
Ultra Librarian
SimboloImpronta
Scarica
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-12-02
Lifecycle StatusProduction (Last Updated: 4 months ago)

Parti correlate

Diodes Inc.ZXTP2008GTA
Trans GP BJT PNP 30V 5.5A 4-Pin(3+Tab) SOT-223 T/R
Diodes Inc.FZT949TA
30V 3W 100@1A,1V 5.5A PNP SOT-223 Bipolar Transistors - BJT ROHS
Diodes Inc.FZT1149ATA
Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
onsemiFZT749
Power Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
onsemiNZT6726
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 50 @ 1A 1V 1.5A 1W 40V
onsemiNZT749
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 80 @ 1A 2V 4A 1.2W 75MHz

Descrizioni

Descrizioni di Diodes Inc. ZX5T949GTA fornite dai suoi distributori.

ZX5T949 Series PNP 30 V 5.5 A 3 W Low Power Transistor - SOT223
Trans GP BJT PNP 30V 5.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
210mV@ 500mA,5.5A PNP 3W 7V 20nA 50V 30V 5.5A SOT-223-3 1.65mm
Bipolar Transistors - BJT PNP 30V
TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:110MHz; Power Dissipation Pd:1.6W; DC Collector Current:5.5A; DC Current Gain hFE:225; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:5.5A; Collector Emitter Voltage Vces:170mV; Continuous Collector Current Ic Max:5.5A; Current Ic @ Vce Sat:5.5A; Current Ic Continuous a Max:5.5A; Current Ic hFE:5A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:110MHz; Hfe Min:40; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:1.6W; Power Dissipation Ptot Max:3W; Pulsed Current Icm:20A; Resistance R1:31mohm; SMD Marking:X5T949; Termination Type:SMD; Voltage Vcbo:50V

Alias del produttore

Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated