Diodes Inc. BC847BVN-7
$ 0.169
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BC847BVN-7 | 2010 | 5 | Cut Tape | ||||||||
| DigiKey | BC847BVNDICT-ND | 4033 | 1 | Cut Tape | ||||||||
| TME | BC847BVN-7 | 0 | 3K | 19h | ||||||||
| Future Electronics | BC847BVN-7 | 0 | 3K | Tape & Reel | ||||||||
| Avnet | BC847BVN-7 | 0 | 3K | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: -65.83%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Modelli CAD
Scarica il simbolo Diodes Inc. BC847BVN-7, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-11
Lifecycle StatusProduction (Last Updated: 3 months ago)
Parti correlate
Diodes Inc.BC847BVC-7
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
ToshibaRN1910FE,LF(CT
300mV@ 250¦ÌA,5mA 2 NPN - Pre-Biased (Dual) 100mW 5V 100nA 50V 100mA SOT-563 1.6mm*1.2mm
Descrizioni
Descrizioni di Diodes Inc. BC847BVN-7 fornite dai suoi distributori.
Trans GP BJT NPN/PNP 45V 0.1A 150mW 6-Pin SOT-563 T/R / TRANS NPN/PNP 45V 0.1A SOT563
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC847B Series NPN 150 W 45 V 100 mA SMT Small Signal Transistor - SOT-563
600mV@ 5mA,100mA,650mV@ 5mA,100mA 1 NPN,1 PNP 150mW 6V 15nA 50V 45V 100mA SOT-563 1.6mm*1.2mm*600¦Ìm
45V 150mW 100mA 1PCSNPN&1PCSPNP SOT-563 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN/PNP, SOT563; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal; Transition Frequency ft: 300MHz
Transistor, Npn & Pnp, Dual, 45V, 100Ma, 150Mw, Sot-563; Transistor, Polaridad:Npn, Pnp; Tensión Colector Emisor V(Br)Ceo:45V; Disipación De Potencia Pd:150Mw; Corriente De Colector Dc:100Ma; Ganancia De Corriente Dc Hfe:290 |Diodes Inc. BC847BVN-7
Alias del produttore
Diodes Inc. ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Diodes Inc. può anche essere conosciuto con i seguenti nomi:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Cronologia dell'inventario
Tendenza a 3 mesi: -65.83%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-563
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight3.005049 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min200
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityNPN, PNP
Power Dissipation150 mW
Transition Frequency300 MHz
Dimensions
Height600 µm
Length1.6 mm
Width1.2 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità