Diodes Inc. 2DD2679-13

DIODES INC. 2DD2679-13 Bipolar (BJT) Single Transistor, NPN, 30 V, 240 MHz, 900 mW, 1.5 A, 270 hFE

TRANS NPN 30V 2A SOT89-3 / Trans GP BJT NPN 30V 2A 2000mW 4-Pin(3+Tab) SOT-89 T/R

2DD2679 Series 30 V 2 A Low VCE(SAT) NPN Surface Mount Transistor - SOT-89-3

Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K

Transistor, Npn, 30V, 1.5A, 900Mw, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:1.5A; Power Dissipation:900Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Diodes Inc. 2DD2679-13

TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 240MHz; Power Dissipation Pd: 900mW; DC Collector Current: 1.5A; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 370mV; Current Ic Continuous a Max: 1.5A; Gain Bandwidth ft Typ: 240MHz; Hfe Min: 270; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)