onsemi FCH060N80-F155
$ 10.198
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Cronologia dell'inventario
Tendenza a 3 mesi: -1.11%
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Supply Chain
Lifecycle StatusProduction (Last Updated: 4 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 years ago)
Parti correlate
STMicroelectronicsSTW65N65DM2AG
MOSFET Automotive-grade N-channel 650 V,42 mOhm typ 60 A MDmesh DM2 Power MOSFET
STMicroelectronicsSTW72N60DM2AG
N-Channel 600 V 42 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
Descrizioni
Descrizioni di onsemi FCH060N80-F155 fornite dai suoi distributori.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247
MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON4
- ON Semiconductor Corporation
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.11%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)58 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.685 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation500 W
Rds On Max60 mΩ
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time213 ns
Turn-On Delay Time55 ns
Dimensions
Height24.75 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità