Infineon IRLZ34NPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRLZ34NPBF | 1,930 | 1 | Tube | 5h | ||||||||
| IRLZ34NPBF | 65 | 1d | ||||||||||
| 63J7705 | 2,522 | 1 | 3d | |||||||||
| IRLZ34NPBF | 73 | 1 | Bulk | 2h | ||||||||
| 70017120 | 784 | 1 | Bulk | 5h |
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance880 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance35 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation56 W
Rds On Max35 mΩ
Recovery Time110 ns
Resistance35 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time8.9 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Inventory History
3 month trend: -52.36%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLZ34NPBF.
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Descriptions
Descriptions of Infineon IRLZ34NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;TO-220AB;PD 68W;VGS +/-16V
Transistor MOSFET N Channel 55 Volt 30 Amp 3 Pin 3+ Tab TO-220 AB
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 30 A, TO-220, IRLZ34NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, 55V, 27A, 35 MOHM, 16.7 NC QG, LOGIC LEVEL, TO-220AB
Trans MOSFET N-CH 55V 30A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 68 W
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 27A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:56W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.7°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:110A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -52.36%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance880 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance35 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation56 W
Rds On Max35 mΩ
Recovery Time110 ns
Resistance35 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time8.9 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements