Infineon IRLZ24N

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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IRLZ24N 195 Buy Now »
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2.00 2.00 2.00 2.00 2.00
C Plus Electronics
IRLZ24N Yes ··
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IRLZ24N 290 ··
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IRLZ24N 5,000 ··
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IRLZ24N 42,000 Send RFQ »
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Descriptions

MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:72A; Voltage Vgs th Max:2V
element14 APAC
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier

Technical Specifications

Breakdown Voltage (Drain to Source) 55 V (min)
Rise Time 74 ns
Part Family IRLZ24N
Lifecycle Status Active
RoHS Non-Compliant
Polarity N-Channel
Power Dissipation 45 W
Lead-Free Status Contains Lead
Drain to Source Voltage (Vds) 55 V
Voltage Rating (DC) 55 V
Case / Package / Footprint TO-220
Current Rating 18 A
Continuous Drain Current (Ids) 18 A
Packaging Bulk
Mounting Type Through Hole

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Compliance Statements
Reach Statement 6 pages 2 years ago
Rohs Statement 1 page 2 years ago
Conflict Mineral Statement

Images

Alternate Names

INFINEON TECHNOLOGIES IRLZ24N
INF IRLZ24N
INFIN IRLZ24N
INFI IRLZ24N
INFINION IRLZ24N
INFINE IRLZ24N
INFINEO IRLZ24N
SIM IRLZ24N
INFENION IRLZ24N
INFIEON IRLZ24N
INFINEN IRLZ24N
INFINEON TECH IRLZ24N
IFT IRLZ24N
IFX IRLZ24N
INFN IRLZ24N
INFINEON/SIEMENS IRLZ24N
INFINEON TECHNO IRLZ24N
INFINEON TECHNOLOGIES (ASIA IRLZ24N
INFINEON/PBF IRLZ24N
INFINEON TEC IRLZ24N
InfineonPb IRLZ24N
Infineon Technologies Americas Inc IRLZ24N
INFIENON IRLZ24N
Infineon Technologie IRLZ24N
INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD IRLZ24N

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