Infineon IRLU024NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.065 Ohm; Id 17A; I-pak (TO-251AA); Pd 45W
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance480 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance65 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation38 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time74 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)55 V
Dimensions
Height6.22 mm
Length6.7056 mm
Width2.3876 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRLU024NPBF.

Upverter
Datasheet11 pages19 years ago
Newark
Datasheet11 pages24 years ago
Datasheet10 pages0 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages19 years ago
Datasheet10 pages24 years ago
iiiC
Datasheet11 pages19 years ago
DigiKey
Datasheet10 pages19 years ago

Inventory History

3 month trend:
+91.08%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRLU024NPBF.

Related Parts

Descriptions

Descriptions of Infineon IRLU024NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W
Single N-Channel 55 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-251AA
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 17 A, I-PAK, IRLU024NPBF
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 60V 14A TO251 IRLU 024 NPBF
HEXFET Power MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 17A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:46W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRLU 024 NPBF
  • IRLU024N
  • SP001553260

Technical Specifications

Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance480 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance65 mΩ
Package Quantity3000
PackagingBulk
Power Dissipation38 W
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time74 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time20 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)55 V
Dimensions
Height6.22 mm
Length6.7056 mm
Width2.3876 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRLU024NPBF.

Upverter
Datasheet11 pages19 years ago
Newark
Datasheet11 pages24 years ago
Datasheet10 pages0 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages19 years ago
Datasheet10 pages24 years ago
iiiC
Datasheet11 pages19 years ago
DigiKey
Datasheet10 pages19 years ago

Compliance

Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago