Infineon IRLML6401TRPBF
Production
In StockTechnical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-4.3 A
Current Rating-4.3 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance830 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Operating Temperature-55 °C
Nominal Vgs-550 mV
Number of Channels1
Number of Elements1
On-State Resistance50 mΩ
Package Quantity3000
PackagingCut Tape
Power Dissipation1.3 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time32 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-550 mV
Turn-Off Delay Time250 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-12 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Inventory History
3 month trend: +85.18%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon IRLML6401TRPBF.
TME
Newark
RS (Formerly Allied Electronics)
Jameco
Farnell
Upverter
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLML6401TRPBF.
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Descriptions
Descriptions of Infineon IRLML6401TRPBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.05Ohm;ID -4.3A;Micro3;PD 1.3W;VGS +/-8V
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; Low Profile (less than 1.1mm); P-Channel MOSFET; SOT-23 Footprint | Target Applications: DC Switches; Load Switch
MOSFET, P CHANNEL, -12V, -4.3A, SOT-23-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.3W RoHS Compliant: Yes
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.55V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:34A; Power Dissipation:1.3W; Power, Pd:1.3W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 10V:0.05ohm; Thermal Resistance, Junction to Case A:100°C/W; Voltage, Vds Max:12V; Voltage, Vgs th Min:-0.4V; Width, Tape:8mm
MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-550mV; Power Dissipation Pd:1.3W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.3A; Package / Case:Micro3; Power Dissipation Pd:1.3W; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-550mV; Voltage Vgs Rds on Measurement:-4.5V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +85.18%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-4.3 A
Current Rating-4.3 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance830 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Operating Temperature-55 °C
Nominal Vgs-550 mV
Number of Channels1
Number of Elements1
On-State Resistance50 mΩ
Package Quantity3000
PackagingCut Tape
Power Dissipation1.3 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time32 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-550 mV
Turn-Off Delay Time250 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-12 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Documents
Download datasheets and manufacturer documentation for Infineon IRLML6401TRPBF.
TME
Newark
RS (Formerly Allied Electronics)
Jameco
Farnell
Upverter
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements