Infineon IRLML5203GTRPBF

-30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
Obsolete

Technical Specifications

Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance510 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance98 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max98 mΩ
Resistance98 MΩ
Rise Time8.2 ns
Threshold Voltage-2.5 V
Turn-Off Delay Time88 ns
Turn-On Delay Time12 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRLML5203GTRPBF.

Newark
Datasheet9 pages15 years ago
iiiC
Datasheet9 pages15 years ago

Alternate Parts

Price @ 1000
$ 0.125
Stock
359,739
9,875,787
Authorized Distributors
1
15
Mount
Surface Mount
Surface Mount
Case/Package
TO-236-3
SOT-23
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
-3 A
3 A
Threshold Voltage
-2.5 V
-2.5 V
Rds On Max
98 mΩ
98 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.25 W
1.25 W
Input Capacitance
510 pF
510 pF

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRLML5203GTRPBF.

Related Parts

Descriptions

Descriptions of Infineon IRLML5203GTRPBF provided by its distributors.

-30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
Single P-Channel 30 V 1.25 W 14 nC Power Mosfet Surface Mount - MICRO-3
Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, -30V, -3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V;

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRLML5203GPBF
  • SP001567222

Technical Specifications

Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance98 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance510 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance98 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max98 mΩ
Resistance98 MΩ
Rise Time8.2 ns
Threshold Voltage-2.5 V
Turn-Off Delay Time88 ns
Turn-On Delay Time12 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRLML5203GTRPBF.

Newark
Datasheet9 pages15 years ago
iiiC
Datasheet9 pages15 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago