Infineon IRLML2060TRPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRLML2060TRPBF | 13,028 | 1 | Tape & Reel | 2d | ||||||||
| ST64838431 | 6,000 | 1 | 1d | |||||||||
| IRLML2060TRPBF | 184,000 | 2d | ||||||||||
| IRLML2060TRPBF | 18,000 | 3K | 3d | |||||||||
| IRLML2060TRPBF | 422 | 1 | 1d |
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)1.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance640 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time2.8 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance64 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance480 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max480 mΩ
Recovery Time21 ns
Resistance480 MΩ
Rise Time3.8 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time3.7 ns
Turn-On Delay Time4.9 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Inventory History
3 month trend: +54.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLML2060TRPBF.
Related Parts
InfineonIRLML0060TRPBF
Transistor MOSFET N-Ch. 60V 2,7A 1,25W 0,092Ohm SOT23 IRLML0060TRPBF
Diodes Inc.DMP6350S-7
P-Channel 60 V 0.35 Ohm 720 mW Surface Mount Mosfet - SOT-23
onsemiFDN5618P
P-Channel PowerTrench® MOSFET, 60V, -1.25A, 170mΩ
Descriptions
Descriptions of Infineon IRLML2060TRPBF provided by its distributors.
Transistor: N-MOSFET; unipolar; 60V; 12A; 0.1ohm; 30W; -55+175 deg.C; SMD; TO252(DPAK)
60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 60 V 480 mOhm 0.67 nC HEXFET® Power Mosfet - MICRO-3
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.25 W
MOSFET, 60V, 1.2A, 480 MOHM, 0.7 NC QG,SOT-23
Trans MOSFET N-CH 60V 1.2A 3-Pin SOT-23 T/R
Power Field-Effect Transistor, 1.2A I(D), 60V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: DC Switches; Load Switch; Load Switch High Side
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +54.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)1.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance640 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time2.8 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance64 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance480 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max480 mΩ
Recovery Time21 ns
Resistance480 MΩ
Rise Time3.8 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time3.7 ns
Turn-On Delay Time4.9 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements