Infineon IRLML0030TRPBF

Transistor: N-MOSFET, unipolar, 30V, 5.3A, 27ohm, 1.3W, -55+150 deg.C, SMD, SOT23
Production

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Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance382 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max27 mΩ
Recovery Time17 ns
Resistance27 MΩ
Rise Time4.4 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time7.4 ns
Turn-On Delay Time5.2 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRLML0030TRPBF.

Farnell
Datasheet10 pages12 years ago
Datasheet10 pages14 years ago
element14 APAC
Datasheet10 pages13 years ago
iiiC
Datasheet10 pages12 years ago
Datasheet10 pages13 years ago

Inventory History

3 month trend:
-42.18%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRLML0030TRPBF.

Related Parts

Descriptions

Descriptions of Infineon IRLML0030TRPBF provided by its distributors.

Transistor: N-MOSFET, unipolar, 30V, 5.3A, 27ohm, 1.3W, -55+150 deg.C, SMD, SOT23
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
MOSFET N-CH 30V 5.3A SOT-23-3 / Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R
Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
30V 5.3A 1.3W 27m´Î@10V5.2A 2.3V@25Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.3A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 5.3A, SOT23-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRLML0030
  • IRLML0030TRPBF.
  • SP001568604

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance382 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max27 mΩ
Recovery Time17 ns
Resistance27 MΩ
Rise Time4.4 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time7.4 ns
Turn-On Delay Time5.2 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRLML0030TRPBF.

Farnell
Datasheet10 pages12 years ago
Datasheet10 pages14 years ago
element14 APAC
Datasheet10 pages13 years ago
iiiC
Datasheet10 pages12 years ago
Datasheet10 pages13 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago