Infineon IRLHM620TR2PBF
In Stock
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 70019943 | 0 | 800 | Bulk | 1d | ||||||||
| 462720-IRLHM620TR2PBF | 20,000 | 7 | 3d | |||||||||
| IRLHM620TR2PBF | 2,112 | 12h | ||||||||||
| 6874512-IRLHM620TR2PBF | 0 | 1d | ||||||||||
| 4054285 | 10 | 22h |
Technical Specifications
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time37 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.62 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.7 W
Rds On Max2.5 mΩ
Recovery Time62 ns
Rise Time25 ns
Threshold Voltage800 mV
Turn-Off Delay Time57 ns
Turn-On Delay Time7.5 ns
Dimensions
Height900 µm
Length3.2766 mm
Width3.3 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLHM620TR2PBF.
Related Parts
InfineonIRLHM630TRPBF
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InfineonIRLHM630TR2PBF
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
InfineonIRLHS6276TRPBF
20V Dual N-Channel Logic Level HEXFET Power MOSFET in a PQFN 2mm x 2mm Lead Free package
Descriptions
Descriptions of Infineon IRLHM620TR2PBF provided by its distributors.
20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R
MOSFET,W DIODE,N CH,20V,26A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time37 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.62 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.7 W
Rds On Max2.5 mΩ
Recovery Time62 ns
Rise Time25 ns
Threshold Voltage800 mV
Turn-Off Delay Time57 ns
Turn-On Delay Time7.5 ns
Dimensions
Height900 µm
Length3.2766 mm
Width3.3 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements