Infineon IRLB8721PBF
Production
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)62 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.077 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
On-State Resistance8.7 mΩ
Package Quantity1000
Power Dissipation65 W
Rds On Max8.7 mΩ
Recovery Time24 ns
Resistance8.7 mΩ
Rise Time93 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage1.8 V
Turn-Off Delay Time9 ns
Turn-On Delay Time9.1 ns
Dimensions
Height9.02 mm
Length10.668 mm
Width4.826 mm
Inventory History
3 month trend: -7.98%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLB8721PBF.
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Descriptions
Descriptions of Infineon IRLB8721PBF provided by its distributors.
Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET,IRLB8721,N-CH,TO-220-3 30V(vds),1.8V(Vgs th),65W,62A
Power Field-Effect Transistor, 62A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 30V, 62A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:TO-220AB; Power Dissipation Pd:65W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -7.98%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)62 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.077 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
On-State Resistance8.7 mΩ
Package Quantity1000
Power Dissipation65 W
Rds On Max8.7 mΩ
Recovery Time24 ns
Resistance8.7 mΩ
Rise Time93 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage1.8 V
Turn-Off Delay Time9 ns
Turn-On Delay Time9.1 ns
Dimensions
Height9.02 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements