Infineon IRL6342PBF

Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC Tube
Obsolete

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.025 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.1 V
Number of Elements1
On-State Resistance14.6 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max14.6 mΩ
Recovery Time20 ns
Rise Time12 ns
Threshold Voltage1.1 V
Turn-Off Delay Time33 ns
Turn-On Delay Time6 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRL6342PBF.

Newark
Datasheet8 pages13 years ago

Alternate Parts

Price @ 1000
$ 0.229
Stock
47,458
809,816
Authorized Distributors
0
12
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
9.9 A
9.9 A
Threshold Voltage
1.1 V
1.1 V
Rds On Max
14.6 mΩ
14.6 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
1.025 nF
1.025 nF

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRL6342PBF.

Related Parts

Descriptions

Descriptions of Infineon IRL6342PBF provided by its distributors.

Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC Tube
MOSFET N-Channel 30V 9.9A HEXFET SOIC8
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Logic Level | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
MOSFET, N CH, 30V, 9.9A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Pulse Current Idm:79A; Voltage Vgs th Max:1.1V; Voltage Vgs th Min:0.5V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.025 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.1 V
Number of Elements1
On-State Resistance14.6 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max14.6 mΩ
Recovery Time20 ns
Rise Time12 ns
Threshold Voltage1.1 V
Turn-Off Delay Time33 ns
Turn-On Delay Time6 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRL6342PBF.

Newark
Datasheet8 pages13 years ago

Compliance

Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago