Infineon IRGB4059DPBF

Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB

Price and Stock

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Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.75 V
Collector Emitter Voltage (VCEO)2.05 V
Element ConfigurationSingle
Max Collector Current8 A
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Operating Temperature-55 °C
Power Dissipation56 W
Reverse Recovery Time55 ns
Rise Time10 ns
TerminationThrough Hole
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Dimensions
Height9.02 mm
Length10.66 mm
Width4.82 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRGB4059DPBF.

Farnell
Datasheet11 pages17 years ago

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRGB4059DPBF.

Related Parts

Descriptions

Descriptions of Infineon IRGB4059DPBF provided by its distributors.

Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220AB
600V UltraFast Copack Trench IGBT in a TO-220AB package
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
SINGLE IGBT, 600V; Transistor Type: IGBT; DC Collector Current: 8A; Collector Emitter Voltage Vces: 600V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; No. of Pins: 3; C-E Breakdown Voltage: 2.2V
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:8A; Collector Emitter Saturation Voltage, Vce(sat):2.05V; Power Dissipation, Pd:56W ;RoHS Compliant: Yes

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRGB4059D
  • IRGB4059DPBF.
  • SP001542260

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.75 V
Collector Emitter Voltage (VCEO)2.05 V
Element ConfigurationSingle
Max Collector Current8 A
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Operating Temperature-55 °C
Power Dissipation56 W
Reverse Recovery Time55 ns
Rise Time10 ns
TerminationThrough Hole
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Dimensions
Height9.02 mm
Length10.66 mm
Width4.82 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRGB4059DPBF.

Farnell
Datasheet11 pages17 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago