Infineon IRFZ44NSTRLPBF
Production
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)49 A
Current Rating49 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance17.5 Ω
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity800
PackagingTape and Reel
Power Dissipation3.8 W
Rds On Max17.5 mΩ
Resistance17.5 MΩ
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height4.826 mm
Length10.668 mm
Inventory History
3 month trend: -6.92%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.611
$ 0.952
Stock
965,035
268,597
Authorized Distributors
16
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
49 A
49 A
Threshold Voltage
-
2 V
Rds On Max
17.5 mΩ
17.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
1.47 nF
1.47 nF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFZ44NSTRLPBF.
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Descriptions
Descriptions of Infineon IRFZ44NSTRLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 49A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
IRFZ44NSTRLPBF,MOSFET, 55V, 49 A, 17.5 MOHM, 42 NC QG, D2-PA
HEXFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; On Resistance Rds(On):0.0175Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
MOSFET, N-CH, 55V, 49A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 49A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0175ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 94W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -6.92%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)49 A
Current Rating49 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance17.5 Ω
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.47 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity800
PackagingTape and Reel
Power Dissipation3.8 W
Rds On Max17.5 mΩ
Resistance17.5 MΩ
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time44 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height4.826 mm
Length10.668 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements