Infineon IRFZ44EPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 0.023 Ohm; Id 48A; TO-220AB; Pd 110W; Vgs +/-20V
Production

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Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)48 A
Current Rating48 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance23 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation110 W
Rds On Max23 mΩ
Resistance23 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFZ44EPBF.

Newark
Datasheet9 pages20 years ago
Datasheet9 pages24 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages24 years ago
Datasheet3 pages20 years ago
Datasheet8 pages24 years ago
DigiKey
Datasheet8 pages20 years ago

Inventory History

3 month trend:
-22.00%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFZ44EPBF.

Related Parts

Descriptions

Descriptions of Infineon IRFZ44EPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-220AB;PD 110W;VGS +/-20V
Single N-Channel 60 V 0.023 Ohm 60 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 60V 48A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 60V, 48A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:48A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ44EPBF.
MOSFET, N, 60V, 48A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:192A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 48 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 70 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 70 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFZ44E
  • IRFZ44EPBF.
  • SP001557776

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)48 A
Current Rating48 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance23 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation110 W
Rds On Max23 mΩ
Resistance23 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFZ44EPBF.

Newark
Datasheet9 pages20 years ago
Datasheet9 pages24 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages24 years ago
Datasheet3 pages20 years ago
Datasheet8 pages24 years ago
DigiKey
Datasheet8 pages20 years ago

Compliance

Environmental Classification
Lead FreeContains Lead, Lead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago