Infineon IRFS38N20DPBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 70017517 | 0 | 5 | Bulk | 1d | ||||||||
| 160901-IRFS38N20DPBF | 22,923 | 14 | 3d | |||||||||
| IRFS38N20DPBF | 139,141 | 7 | Tape & Reel | 1d | ||||||||
| IRFS38N20DPBF | 1,304 | 2d | ||||||||||
| IRFS38N20DPBF | 356 | 10 | 1d |
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)43 A
Current Rating38 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance54 mΩ
Package Quantity1000
Power Dissipation3.8 W
Rds On Max54 mΩ
Recovery Time240 ns
Resistance54 mΩ
Rise Time95 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)200 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon IRFS38N20DPBF.
Factory Futures
iiiC
RS (Formerly Allied Electronics)
Jameco
Farnell
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFS38N20DPBF.
Related Parts
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onsemiFDB44N25TM
N-Channel Power MOSFET, UniFETTM, 250V, 44A, 69mΩ, D2PAK
InfineonIRFS4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
Descriptions
Descriptions of Infineon IRFS38N20DPBF provided by its distributors.
Transistor MOSFET Negative Channel 200 Volt 38A 3-Pin(2+Tab) D2PAK
MOSFET Transistor, N Channel, 44 A, 200 V, 54 mohm, 10 V, 5 V
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS +/-30V
Single N-Channel 200 V 0.054 Ohm 60 nC HEXFET® Power Mosfet - D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
N CHANNEL MOSFET, 200V, 44A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:44A;
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, 200V, 44A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:44A; Resistance, Rds On:0.054ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:180A; Power Dissipation:320W; Power, Pd:320W; Resistance, Rds on @ Vgs = 10V:0.054ohm; Thermal Resistance, Junction to Case A:0.47°C/W; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs th Max:5V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)43 A
Current Rating38 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance54 mΩ
Package Quantity1000
Power Dissipation3.8 W
Rds On Max54 mΩ
Recovery Time240 ns
Resistance54 mΩ
Rise Time95 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)200 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Documents
Download datasheets and manufacturer documentation for Infineon IRFS38N20DPBF.
Factory Futures
iiiC
RS (Formerly Allied Electronics)
Jameco
Farnell
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements