Infineon IRFR9120NTRPBF

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.48 Ohm; Id -6.6A; D-pak (TO-252AA); Pd 40W
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-6.5 A
Current Rating-6.6 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance480 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation39 W
Rds On Max480 mΩ
Resistance480 mΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-100 V
Dimensions
Height2.39 mm
Length6.7056 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFR9120NTRPBF.

element14 APAC
Datasheet11 pages19 years ago
Newark
Datasheet11 pages26 years ago
_legacy Avnet
Datasheet10 pages19 years ago
DigiKey
Datasheet10 pages19 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages19 years ago
iiiC
Datasheet11 pages19 years ago

Inventory History

3 month trend:
+62.63%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFR9120NTRPBF.

Related Parts

Descriptions

Descriptions of Infineon IRFR9120NTRPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.6A;D-Pak (TO-252AA);PD 40W
Single P-Channel 100 V 40 W 27 nC Hexfet Power Mosfet Surface Mount - TO-252AA
MOSFET, P-CHANNEL, -100V, -6.5A, 480 MOHM, 18 NC QG, D-PAK
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:40W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFR9120NTRPBF.
MOSFET, P CH, 100V, 6.6A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.6 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 480 / Gate-Source Voltage V = 20 / Fall Time ns = 31 / Rise Time ns = 47 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 40

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFR9120NTRPBF.
  • SP001557182

Technical Specifications

Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-6.5 A
Current Rating-6.6 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance480 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation39 W
Rds On Max480 mΩ
Resistance480 mΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time28 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-100 V
Dimensions
Height2.39 mm
Length6.7056 mm
Width6.22 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFR9120NTRPBF.

element14 APAC
Datasheet11 pages19 years ago
Newark
Datasheet11 pages26 years ago
_legacy Avnet
Datasheet10 pages19 years ago
DigiKey
Datasheet10 pages19 years ago
RS (Formerly Allied Electronics)
Datasheet4 pages19 years ago
iiiC
Datasheet11 pages19 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago