IRFR5505TRPBF Infineon D-pak Mosfet
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRFR5505TRPBF | 13,938 | 1 | Tape & Reel | 7h | ||||||||
| 40M7905 | 2,720 | 1 | 3d | |||||||||
| 70017781 | 20 | 1 | Bulk | 1d | ||||||||
| IRFR5505TRPBF | 7,532 | 68 | 6h | |||||||||
| IRFR5505TRPBF | 8,398 | 1 | 6h |
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-18 A
Current Rating-18 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance110 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation57 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Inventory History
3 month trend: +7.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.48
$ 0.652
Stock
2,827,513
221,882
Authorized Distributors
16
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
-55 V
-55 V
Continuous Drain Current (ID)
-18 A
-18 A
Threshold Voltage
-4 V
-2 V
Rds On Max
110 mΩ
110 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
57 W
57 W
Input Capacitance
650 pF
650 pF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFR5505TRPBF.
Related Parts
InfineonIRFR5505PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
InfineonAUIRFR5505
Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonIRFR5505GTRPBF
MOSFET, P-CHANNEL, -55V, -18A, 110 MOHM, 21.3 NC QG, D-PAK, HALOGEN-FREE
Descriptions
Descriptions of Infineon IRFR5505TRPBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252-3
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
P CHANNEL MOSFET, -55V, 18A, D-PAK; TRAN; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A;
HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-18A; On Resistance, Rds(on):110mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak; Power Dissipation, Pd:57W ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 110 / Gate-Source Voltage V = 20 / Fall Time ns = 16 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 57
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +7.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-18 A
Current Rating-18 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation57 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance110 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation57 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements