Infineon IRFR2405TRPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRFR2405TRPBF | 2,154 | 1 | Tape & Reel | 12h | ||||||||
| IRFR2405TRPBF | 2,000 | 21h | ||||||||||
| IRFR2405TRPBF | 735 | 1 | Cut Tape | 12h | ||||||||
| IRFR2405TRPBF | 14,000 | 2K | 12h | |||||||||
| IRFR2405PBFCT-ND | 65,339 | 1 | Cut Tape | 12h |
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)56 A
Current Rating56 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.43 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance16 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max16 mΩ
Rise Time130 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Inventory History
3 month trend: +36.86%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.573
$ 4.27
Stock
1,176,114
358,883
Authorized Distributors
14
1
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
56 A
30 A
Threshold Voltage
-
-
Rds On Max
16 mΩ
16 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
110 W
110 W
Input Capacitance
2.43 nF
2.43 nF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFR2405TRPBF.
Related Parts
InfineonIRFR2405PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
InfineonAUIRFR2905Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonIRFR2905ZPBF
IRFR2905ZPBF N-channel MOSFET Transistor, 59 A, 55 V, 3-Pin DPAK
Descriptions
Descriptions of Infineon IRFR2405TRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55 V 0.016 Ohm 70 nC HEXFET® Power Mosfet - TO-252AA
IRFR2405TRPBF,MOSFET, 55V, 56A , 16 MOHM, 70 NC QG, D-PAK<AZ
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N-CH, 55V, 56A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0118ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +36.86%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)56 A
Current Rating56 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.43 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance16 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation110 W
Rds On Max16 mΩ
Rise Time130 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements