Infineon IRFR13N15DTRPBF
NRND
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 70018994 | 0 | 6K | Bulk | 1d | ||||||||
| 462204-IRFR13N15DTRPBF | 8,340 | 12 | 3d | |||||||||
| 6847793-IRFR13N15DTRPBF | 9,357 | 1d | ||||||||||
| IRFR13N15DTRPBF | 350 | 10 | 1d | |||||||||
| IRFR13N15DTRPBF | 31,762 | 10 | 1d |
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation86 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance180 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation86 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time26 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time8 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFR13N15DTRPBF.
Related Parts
Infineon IRFR18N15DTRPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W
Infineon IRFR18N15DPBF
Single N-Channel 150 V 0.125 Ohm 28 nC HEXFET® Power Mosfet - TO-252AA
onsemi FQD16N15TM
MOSFET N-CH 150V 11.8A DPAK
Descriptions
Descriptions of Infineon IRFR13N15DTRPBF provided by its distributors.
Single N-Channel 150V 0.18 Ohm 19 nC HEXFET® Power Mosfet - TO-252AA
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):180mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)150 V
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance620 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation86 W
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance180 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation86 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time26 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time8 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements