Infineon IRFP4332PBF
Production
Technical Specifications
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)57 A
Current Rating57 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance5.86 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation360 W
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance33 mΩ
Package Quantity400
Power Dissipation360 W
Rds On Max33 mΩ
Recovery Time290 ns
Resistance33 MΩ
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Voltage Rating (DC)250 V
Dimensions
Height20.3 mm
Length15.875 mm
Width5.3 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFP4332PBF.
Related Parts
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MOSFET Operating temperature: -40...+175 ¡ãC Housing type: TO-247 Power dissipation: 150 W
Infineon IRFP90N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
Descriptions
Descriptions of Infineon IRFP4332PBF provided by its distributors.
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W
MOSFET, N Ch., 250V, 57A, 33 MOHM, 99 NC QG, TO-247AC, Pb-Free
Single N-Channel 250 V 33 mOhm 150 nC HEXFET® Power Mosfet - TO-247AC
PDP SWITCH HEXFET POWER MOSFET Power Field-Effect Transistor, 57A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:300V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:120mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:57A; Package / Case:TO-247AC; Power Dissipation Pd:120mW; Pulse Current Idm:230A; SMD Marking:120; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)57 A
Current Rating57 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance5.86 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation360 W
Min Operating Temperature-40 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance33 mΩ
Package Quantity400
Power Dissipation360 W
Rds On Max33 mΩ
Recovery Time290 ns
Resistance33 MΩ
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Voltage Rating (DC)250 V
Dimensions
Height20.3 mm
Length15.875 mm
Width5.3 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements