Infineon IRFP260NPBF
Production
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)50 A
Current Rating50 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.057 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity400
PackagingBulk
Power Dissipation300 W
Rds On Max40 mΩ
Recovery Time402 ns
Resistance40 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)200 V
Dimensions
Height20.2946 mm
Length15.875 mm
Width5.3 mm
Inventory History
3 month trend: +16.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon IRFP260NPBF.
TME
Jameco
DigiKey
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFP260NPBF.
Related Parts
InfineonIRFP260MPBF
Trans MOSFET N-CH Si 200V 50A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 50A TO-247AC
InfineonIRFP250MPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
InfineonIRFP3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-247AC;PD 200W;VGS +/-20V
Descriptions
Descriptions of Infineon IRFP260NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V
Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC
Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC
Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 200V, 50A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFP260NPBF.
MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +16.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)50 A
Current Rating50 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.057 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity400
PackagingBulk
Power Dissipation300 W
Rds On Max40 mΩ
Recovery Time402 ns
Resistance40 mΩ
Rise Time60 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)200 V
Dimensions
Height20.2946 mm
Length15.875 mm
Width5.3 mm
Documents
Download datasheets and manufacturer documentation for Infineon IRFP260NPBF.
TME
Jameco
DigiKey
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements