Infineon IRFP250NPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.075 Ohm; Id 30A; TO-247AC; Pd 214W; Vgs +/-20V
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.159 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance75 mΩ
Package Quantity400
PackagingBulk
Power Dissipation214 W
Rds On Max75 mΩ
Recovery Time279 ns
Resistance75 mΩ
Rise Time43 ns
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time41 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)200 V
Dimensions
Height20.2946 mm
Length15.875 mm
Width5.3 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFP250NPBF.

Newark
Datasheet8 pages13 years ago
Datasheet9 pages20 years ago
element14 APAC
Datasheet9 pages19 years ago
Mouser
Datasheet8 pages19 years ago
iiiC
Datasheet8 pages13 years ago
Datasheet9 pages19 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages20 years ago
Datasheet8 pages19 years ago
Jameco
Datasheet10 pages15 years ago
DigiKey
Datasheet8 pages20 years ago

Inventory History

3 month trend:
+9.68%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFP250NPBF.

Related Parts

Descriptions

Descriptions of Infineon IRFP250NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
INFINEON IRFP250N MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
INFINEON THT MOSFET NFET 200V 30A 75mΩ 175°C TO-247 IRFP250N-PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 200V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFP250N
  • IRFP250NPBF.
  • SP001554946

Technical Specifications

Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.159 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance75 mΩ
Package Quantity400
PackagingBulk
Power Dissipation214 W
Rds On Max75 mΩ
Recovery Time279 ns
Resistance75 mΩ
Rise Time43 ns
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time41 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)200 V
Dimensions
Height20.2946 mm
Length15.875 mm
Width5.3 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFP250NPBF.

Newark
Datasheet8 pages13 years ago
Datasheet9 pages20 years ago
element14 APAC
Datasheet9 pages19 years ago
Mouser
Datasheet8 pages19 years ago
iiiC
Datasheet8 pages13 years ago
Datasheet9 pages19 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages20 years ago
Datasheet8 pages19 years ago
Jameco
Datasheet10 pages15 years ago
DigiKey
Datasheet8 pages20 years ago

Compliance

Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago