Infineon IRFP044NPBF

MOSFET, Power; N-Channel; 0.020 Ohms (Max.) @ 10 V, 29 A; 55 V (Min.); 40 degC/
Production
In Stock

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)49 A
Current Rating53 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.5 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity400
PackagingBulk
Power Dissipation100 W
Rds On Max20 mΩ
Recovery Time110 ns
Rise Time80 ns
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height20.7 mm
Lead Pitch5.45 mm
Length15.87 mm
Width5.3086 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFP044NPBF.

Newark
Datasheet9 pages19 years ago
Datasheet8 pages26 years ago
International Rectifier
Datasheet9 pages26 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages19 years ago
Datasheet8 pages26 years ago
Jameco
Datasheet9 pages15 years ago
iiiC
Datasheet9 pages19 years ago
Datasheet9 pages26 years ago
DigiKey
Datasheet8 pages19 years ago

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFP044NPBF.

Related Parts

Descriptions

Descriptions of Infineon IRFP044NPBF provided by its distributors.

MOSFET, Power; N-Channel; 0.020 Ohms (Max.) @ 10 V, 29 A; 55 V (Min.); 40 degC/
Transistor MOSFET Negative Channel 55 Volt 53A 3-Pin(3+Tab) TO-247AC
Single N-Channel 55 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - TO-247AC
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 53A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:49A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:100W; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:55V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFP044N
  • SP001571098

Technical Specifications

Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)49 A
Current Rating53 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.5 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity400
PackagingBulk
Power Dissipation100 W
Rds On Max20 mΩ
Recovery Time110 ns
Rise Time80 ns
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)55 V
Dimensions
Height20.7 mm
Lead Pitch5.45 mm
Length15.87 mm
Width5.3086 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFP044NPBF.

Newark
Datasheet9 pages19 years ago
Datasheet8 pages26 years ago
International Rectifier
Datasheet9 pages26 years ago
RS (Formerly Allied Electronics)
Datasheet3 pages19 years ago
Datasheet8 pages26 years ago
Jameco
Datasheet9 pages15 years ago
iiiC
Datasheet9 pages19 years ago
Datasheet9 pages26 years ago
DigiKey
Datasheet8 pages19 years ago

Compliance

Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago