MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W
Benefits: Low RDSon (less than 14.4 mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 2.7C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs