Infineon IRFH5406TRPBF

Single N-Channel 60 V 14.4 mOhm 32 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11.4 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.256 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.6 W
Manufacturer Package IdentifierIRFH5406TRPBF
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance14.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation46 W
Rds On Max14.4 mΩ
Resistance14.4 MΩ
Rise Time8.7 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time5.4 ns
Turn-On Delay Time5.4 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFH5406TRPBF.

Newark
Datasheet8 pages12 years ago
Datasheet8 pages13 years ago
Future Electronics
Datasheet9 pages9 years ago
element14 APAC
Datasheet10 pages9 years ago

Inventory History

3 month trend:
-13.72%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFH5406TRPBF.

Related Parts

Descriptions

Descriptions of Infineon IRFH5406TRPBF provided by its distributors.

Single N-Channel 60 V 14.4 mOhm 32 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Trans MOSFET N-CH 60V 11A 8-Pin QFN T/R - Product that comes on tape, but is not reeled
60V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R / MOSFET N-CH 60V 40A 8-PQFN
MOSFET, 60V, 40A, 14.4 mOhm, 23 nC Qg, PQFN 5x6
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 46 W
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W
Benefits: Low RDSon (less than 14.4 mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 2.7C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFH5406
  • IRFH5406TRPBF.
  • SP001577902

Technical Specifications

Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance11.4 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.256 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.6 W
Manufacturer Package IdentifierIRFH5406TRPBF
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance14.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation46 W
Rds On Max14.4 mΩ
Resistance14.4 MΩ
Rise Time8.7 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time5.4 ns
Turn-On Delay Time5.4 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFH5406TRPBF.

Newark
Datasheet8 pages12 years ago
Datasheet8 pages13 years ago
Future Electronics
Datasheet9 pages9 years ago
element14 APAC
Datasheet10 pages9 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago