Infineon IRFB42N20DPBF
NRND
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFB42N20DPBF | 290 | 7d | ||||||||||
| 604816-IRFB42N20D | 46,100 | 45 | 2d | |||||||||
| 6828209-IRFB42N20DPBF | 67,439 | 10h | ||||||||||
| IRFB42N20DPBF | 124,279 | 7 | Tape & Reel | 1d | ||||||||
| IRFB42N20DPBF | 45,385 | >1wk |
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)44 A
Current Rating42 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.43 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance55 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation300 W
Rds On Max55 mΩ
Recovery Time330 ns
Resistance55 Ω
Rise Time69 ns
Threshold Voltage5.5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)200 V
Dimensions
Height15.24 mm
Length10.5156 mm
Width4.69 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFB42N20DPBF.
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Descriptions
Descriptions of Infineon IRFB42N20DPBF provided by its distributors.
Single N-Channel 200 V 0.055 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A) | MOSFET N-CH 200V 44A TO-220AB
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET, 200V, 42.6A, 55 mOhm, 91 nC Qg, TO-220AB
Trans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB
MOSFET, N, 200V, 42.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:42.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Junction to Case Thermal Resistance A:0.5°C/W; On State resistance @ Vgs = 10V:55ohm; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)44 A
Current Rating42 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.43 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2.4 W
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance55 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation300 W
Rds On Max55 mΩ
Recovery Time330 ns
Resistance55 Ω
Rise Time69 ns
Threshold Voltage5.5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)200 V
Dimensions
Height15.24 mm
Length10.5156 mm
Width4.69 mm
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements