Infineon IRFB4127PBF

Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
Production

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Technical Specifications

Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time18 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time56 ns
Turn-On Delay Time17 ns
Dimensions
Height9.02 mm
Length10.668 mm
Width4.826 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFB4127PBF.

TME
Datasheet8 pages15 years ago

Inventory History

3 month trend:
-18.62%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFB4127PBF.

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Descriptions

Descriptions of Infineon IRFB4127PBF provided by its distributors.

Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 76A 3-Pin (3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 375 W
MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free
N Channel Mosfet, 200V, 76A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:76A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFB4127PBF.
MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:200V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFB 4127PBF
  • IRFB4127
  • IRFB4127PBF.
  • SP001560212

Technical Specifications

Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance17 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance20 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max20 mΩ
Resistance20 MΩ
Rise Time18 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time56 ns
Turn-On Delay Time17 ns
Dimensions
Height9.02 mm
Length10.668 mm
Width4.826 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFB4127PBF.

TME
Datasheet8 pages15 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago