Infineon IRFB3206PBF

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)210 A
Current Rating210 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.54 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max3 mΩ
Recovery Time50 ns
Resistance3 MΩ
Rise Time82 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)60 V
Dimensions
Height9.017 mm
Length10.668 mm
Width4.826 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFB3206PBF.

Newark
Datasheet12 pages9 years ago
Datasheet11 pages15 years ago
iiiC
Datasheet11 pages15 years ago
Datasheet11 pages15 years ago
DigiKey
Datasheet12 pages16 years ago

Alternate Parts

Price @ 1000
$ 1.013
$ 1.31
Stock
1,530,194
1,048,878
Authorized Distributors
17
9
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
210 A
210 A
Threshold Voltage
4 V
-
Rds On Max
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
6.54 nF
6.54 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFB3206PBF.

Related Parts

Descriptions

Descriptions of Infineon IRFB3206PBF provided by its distributors.

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB
MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, Pb-Free
INFINEON THT MOSFET NFET 60V 120A 3mΩ 175°C TO-220 IRFB3206PBF
Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 75A/60V TO220 IRFB 3206 PBF
MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:210A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IFX
  • IR/INFINEON
  • IFT
  • INFINEON/SIEMENS
  • INFIENON
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFB 3206
  • IRFB 3206 PBF
  • IRFB 3206PBF
  • IRFB3206
  • IRFB3206 PBF
  • IRFB3206-PBF
  • IRFB3206PBF .
  • IRFB3206PBF.
  • SP001566480

Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)210 A
Current Rating210 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.54 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max3 mΩ
Recovery Time50 ns
Resistance3 MΩ
Rise Time82 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time55 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)60 V
Dimensions
Height9.017 mm
Length10.668 mm
Width4.826 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFB3206PBF.

Newark
Datasheet12 pages9 years ago
Datasheet11 pages15 years ago
iiiC
Datasheet11 pages15 years ago
Datasheet11 pages15 years ago
DigiKey
Datasheet12 pages16 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago