Infineon IRF9530NSTRLPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRF9530NSTRLPBF | 2,074 | 1 | Tape & Reel | 2d | ||||||||
| IRF9530NSTRLPBF | 1,008 | 15 | 19m | |||||||||
| IRF9530NSTRLPBF | 1,008 | 1 | Cut Tape | 19m | ||||||||
| IRF9530NSTRLPBFCT-ND | 1,158 | 1 | Cut Tape | 1d | ||||||||
| 8962649 | 3,200 | 800 | Tape & Reel | 1d |
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-14 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-100 V
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max200 mΩ
Rise Time58 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Inventory History
3 month trend: +12.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF9530NSTRLPBF.
Related Parts
InfineonIRL530NSTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;D2Pak;PD 79W;VGS +/-20V;Qg 34
InfineonIRL530NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;D2Pak;PD 79W;VGS +/-20V;Qg 34
InfineonIRL530NSTRRPBF
Single N-Channel 100V 0.15 Ohm 34 nC HEXFET® Power Mosfet - D2PAK
Descriptions
Descriptions of Infineon IRF9530NSTRLPBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;D2Pak;PD 79W;VGS +/-20V;-55
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single P-Channel 100V 0.2 Ohm 58 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET P-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
IRF9530NSTRLPBF,MOSFET, P-CHAN NEL, -100V, -14A, 200 MOHM, 3
HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, -100V, -14A, TO-263AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-14A; Source Voltage Vds:-100V; On Resistance
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-14A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:79W ;RoHS Compliant: Yes
MOSFET, P-CH, -100V, -14A, TO-263AB; Transistor Polarity: P Channel; Continuous Drain Current Id: -14A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 79W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 14 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 200 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 58 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +12.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-14 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-100 V
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max200 mΩ
Rise Time58 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements