Infineon IRF9310PBF
Obsolete
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 604738-IRF9310PBF | 77,700 | 75 | 3d | |||||||||
| IRF9310PBF | 1,971 | 4d | ||||||||||
| IRF9310PBF | 112,476 | 7 | Tape & Reel | 1d | ||||||||
| IRF9310PBF | 2,544 | 2d | ||||||||||
| IRF9310PBF | 420 | 10 | 2d |
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-20 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
On-State Resistance4.6 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max4.6 mΩ
Recovery Time107 ns
Resistance4.6 MΩ
Rise Time47 ns
Threshold Voltage-1.8 V
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.968
Stock
356,570
1,754,057
Authorized Distributors
0
10
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
-20 A
20 A
Threshold Voltage
-1.8 V
-1.8 V
Rds On Max
4.6 mΩ
4.6 mΩ
Gate to Source Voltage (Vgs)
20 V
25 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
5.25 nF
7.54 nF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF9310PBF.
Related Parts
InfineonIRF9310TRPBF
Single P-Channel 30V 6.8 mOhm 58 nC HEXFET® Power Mosfet - SOIC-8
onsemiFDS8670
Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
Descriptions
Descriptions of Infineon IRF9310PBF provided by its distributors.
Single P-Channel 30 V 6.8 mOhm 58 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
MOSFET,P CH,30V,20A,SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-20A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)-20 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
On-State Resistance4.6 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max4.6 mΩ
Recovery Time107 ns
Resistance4.6 MΩ
Rise Time47 ns
Threshold Voltage-1.8 V
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements