Infineon IRF8707PBF

IRF8707PBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
Obsolete
In Stock
Manufacturer PageDatasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
See all price breaks
DistributorSKUMOQPkg
Win Source
160140-IRF8707PBF281,600225
0.164
0.164
3d
Worldway Electronics
IRF8707PBF131,2687Tape & Reel
0.044
0.044
0.044
0.044
1d
RX Electronics Limited
IRF8707PBF62,76510
0.223
0.223
0.082
0.082
2d
Suntronic
IRF8707PBF48,38510
0.329
0.265
0.202
0.178
1d
CXDA Electronics
IRF8707PBF29,39210
0.280
0.240
0.240
0.230
1d

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance11.9 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max11.9 mΩ
Recovery Time18 ns
Resistance11.9 MΩ
Rise Time7.9 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time7.3 ns
Turn-On Delay Time6.7 ns
Dimensions
Height1.5 mm
Length5 mm
Width3.9878 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available

Documents

Download datasheets and manufacturer documentation for Infineon IRF8707PBF.

element14 APAC
Datasheet9 pages16 years ago
Farnell
Datasheet5 pages10 years ago
Datasheet9 pages16 years ago

Alternate Parts

This Part
Alternate Parts
InfineonIRF8707PBF
InfineonIRF8707TRPBF
InfineonIRF8707TRPBF
Price @ 1000
$ 0.205
$ 0.205
Stock
613,388
1,486,488
1,486,488
Authorized Distributors
0
13
13
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
SO
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
1.8 V
1.8 V
1.8 V
Rds On Max
11.9 mΩ
11.9 mΩ
11.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
760 pF
760 pF
760 pF

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRF8707PBF.

Related Parts

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N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
Details
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
Details
onsemiFDS6680A
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
Details

Descriptions

Descriptions of Infineon IRF8707PBF provided by its distributors.

IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC Tube
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Charge Qrr @ Tj = 25°C Typ:6.2nC; Current Id Max:11A; Package / Case:SOIC-8; Pulse Current Idm:88A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

Images

Infineon
Newark
TME
Distrelec
International Rectifier
Conrad

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • SP001560112
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available

Technical Specifications

Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance11.9 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max11.9 mΩ
Recovery Time18 ns
Resistance11.9 MΩ
Rise Time7.9 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time7.3 ns
Turn-On Delay Time6.7 ns
Dimensions
Height1.5 mm
Length5 mm
Width3.9878 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRF8707PBF.

element14 APAC
Datasheet9 pages16 years ago
Farnell
Datasheet5 pages10 years ago
Datasheet9 pages16 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Conflict Mineral StatementN/AN/A
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago